Electronic package, electronic packaging module having the electronic package, and method for fabricating the electronic package

ABSTRACT

The present application provides an electronic package having an optoelectronic component and a laser component disposed on a packaging unit, with the optoelectronic component and the laser component being separated from each other. Since the laser component and the optoelectronic component are separated from each other, the electronic package has a reduced fabrication difficulty and a high yield rate. A method for fabricating the electronic package and an electronic packaging module having the electronic package are also provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Taiwanese Application Serial No.108129818, filed on Aug. 21, 2019. The entirety of the application ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND 1. Technical Field

The present disclosure relates to semiconductor packaging techniques,and, more particularly, to an electronic package, an electronicpackaging module having the electronic package, and a method forfabricating the electronic package.

2. Description of the Prior Art

With the rapid development in electronic industry, electronic productsare having various functions of high performance. In order to meet theminiaturization packaging standard required by an electronic package, awafer level packaging (WLP) technique was brought to the market.

FIGS. 1A to 1E are cross-sectional views illustrating a method forfabricating a semiconductor package 1 by employing a wafer-levelpackaging technique according to the prior art.

As shown in FIG. 1A, a thermal release tape 100 is formed on a carrier10.

Then, a plurality of communication chips 11 are disposed on the thermalrelease tape 100. Each of the communication chips 11 has an inactivesurface 11 b and an active surface 11 a that opposes the inactivesurface 11 b, has a plurality of electrode pads 110 thereon, and isadhered onto the thermal release tape 100.

As shown in FIG. 1B, an encapsulation resin 14 is formed on the thermalrelease tape 100 and encapsulates the communication chips 11.

As shown in FIG. 1C, the encapsulation resin 14 is baked, the thermalrelease tape 100 is cured, and the thermal release tape 100 and thecarrier 10 are removed, to expose the active surfaces 11 a of thecommunication chips 11.

As shown in FIG. 1D, a circuit structure 16 is disposed on theencapsulation resin 14 and the active surfaces 11 a of the communicationchips 11 and electrically connected to the electrode pads 110. Then, aninsulation protection layer 18 is formed on the circuit structure 16,with a portion of a surface of the circuit structure 16 exposed from theinsulation protection layer 18 for conductive elements 17, such assolder balls, to be bonded thereto.

As shown in FIG. 1E, a singulation process is performed along a cuttingpath L shown in FIG. 1D, to obtain a plurality of semiconductor packages1.

As the data network scaling to meet the ever-increasing bandwidthdemand, the drawbacks of a copper data channel (e.g., the circuit of thecircuit structure 16) are more and more significant. Signal attenuationand crosstalk due to radiation electromagnetic energy has become themain obstacles that the designer of this system has to address. Forinstance, the radiation electromagnetic energy between the communicationchips 11 causes signal attenuation and crosstalk.

Balancing, encoding and shielding techniques were developed to ease thesignal attenuation and crosstalk. However, these techniques needrelatively large power, are complex, suffer cable capacity loss, merelyimprove the suitability for a local area, and has limited scalability.

As technology evolving, the market is in great need of opticalcommunication, and the communication equipment, to which the fibercommunication is applied, has low speed (100 Gbps) and cannot meet theneed.

According to the prior art, the communication chips 11 are disposed in asame packaging structure. If one of the communication chips 11malfunctioned, the whole semiconductor package 1, including theremaining well-functioning communication chips 11, will be discarded.The semiconductor package 1 thus has a high replacing cost.

Therefore, how to overcome the drawbacks of the prior art is becoming anurgent issue in the art.

SUMMARY

In view of the drawbacks of the prior art, the present disclosureprovides an electronic package, comprising: an encapsulation layerhaving a first surface, a second surface opposing the first surface, anda lateral surface adjoining the first and second surfaces; a firstelectronic component embedded in the encapsulation layer; a plurality ofconductive pillars embedded in the encapsulation layer; a circuitstructure formed on the first surface of the encapsulation layer andelectrically connected to the conductive pillars and the firstelectronic component; a laser component disposed on the circuitstructure and electrically connected to the circuit structure; and anoptoelectronic component disposed on the circuit structure andelectrically connected to the circuit structure, wherein the lasercomponent and the optoelectronic component are separated from eachother.

The present disclosure also provides an electronic packaging module,comprising a main board and the above-described electronic packagedisposed on the main board.

The present disclosure further provides a method for fabricating anelectronic package, comprising: disposing a plurality of conductivepillars and at least one first electronic component on a carrying board;forming on the carrying board an encapsulation layer that encapsulatesthe first electronic component and the conductive pillars and has afirst surface, a second surface opposing the first surface and bonded tothe carrying board, with end surfaces of the conductive pillars exposedfrom the first surface of the encapsulation layer; disposing a circuitstructure on the first surface of the encapsulation layer andelectrically connecting the circuit structure to the conductive pillarsand the first electronic component, wherein the encapsulation layer hasa lateral surface adjoining the first and second surfaces; disposing alaser component and an optoelectronic component on the circuit structureand electrically connecting the laser component and the optoelectroniccomponent to the circuit structure, wherein the laser component and theoptoelectronic component are separated from each other; and removing thecarrying board.

In an embodiment, the first electronic component is bonded andelectrically connected to a plurality of conductive bodies. In anotherembodiment, the conductive bodies are embedded in the encapsulationlayer and electrically connected to the circuit structure.

In an embodiment, the plurality of conductive pillars surround the firstelectronic component.

In an embodiment, the laser component protrudes from the lateral surfaceof the encapsulation layer.

In an embodiment, the optoelectronic component protrudes from thelateral surface of the encapsulation layer.

In an embodiment, the method further comprises disposing a circuitportion on the second surface of the encapsulation layer andelectrically connecting the circuit portion to the conductive pillars.In another embodiment, the method further comprises disposing aplurality of conductive elements on the circuit portion.

In an embodiment, the method further comprises disposing a carryingstructure on the second surface of the encapsulation layer. In anotherembodiment, the method further comprises disposing a second electroniccomponent on the carrying structure.

In the electronic package and the method for fabricating the sameaccording to the present disclosure, the first electronic component isused as a trans impedance amplifier and/or a driver, allowing embeddedchips to be bridged to homogenous chips, so as to reduce the electricloss of signal transmission, and the conductive pillars provide highcurrent and a shielding effect.

In the electronic package and the method for fabricating the sameaccording to the present disclosure, the laser component and theoptoelectronic component are fabricated separately, so as to reduce thefabrication difficulty and increase the yield rate.

In the electronic package and the method for fabricating the sameaccording to the present disclosure, as the laser component is damaged,it is the laser component that is to be replaced, the whole electronicpackage, including the well-functioning optoelectronic components, canremain without being discarded. Compared with the prior art, theelectronic package according to the present disclosure will not wastematerials and can reduce the replacement cost at the user end.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are cross-sectional views illustrating a method forfabricating a semiconductor package according to prior art;

FIGS. 2A to 2E are cross-sectional views illustrating a method forfabricating an electronic package according to the present disclosure;

FIG. 2A′ is a top view of a portion of FIG. 2A;

FIG. 2D′ is a top view of a portion of FIG. 2D;

FIG. 3A is a cross-sectional view of an electronic package of anotherembodiment according to the present disclosure;

FIG. 3B is a top view of a portion of FIG. 3A; and

FIG. 4 is a cross-sectional view of an application of FIG. 3A.

DETAILED DESCRIPTION

The following illustrative embodiments are provided to illustrate thedisclosure of the present disclosure, these and other advantages andeffects can be apparently understood by those in the art after readingthe disclosure of this specification.

It should be noted that the structures, ratios, sizes shown in thedrawings appended to this specification are to be construed inconjunction with the disclosure of this specification in order tofacilitate understanding of those skilled in the art. They are notmeant, in any ways, to limit the implementations of the disclosure, andtherefore have no substantial technical meaning. Without affecting theeffects created and objectives achieved by the disclosure, anymodifications, changes or adjustments to the structures, ratiorelationships or sizes, are to be construed as fall within the rangecovered by the technical contents disclosed herein. Meanwhile, terms,such as “above”, “beneath”, “first,” “second,” “a” and the like, are forillustrative purposes only, and are not meant to limit the rangeimplementable by the disclosure. Any changes or adjustments made totheir relative relationships, without modifying the substantialtechnical contents, are also to be construed as within the rangeimplementable by the disclosure.

FIGS. 2A to 2E are cross-sectional views illustrating a method forfabricating an electronic package 2 according to the present disclosure.

As shown in FIG. 2A, a plurality of conductive pillars 23 and at leastone first electronic component 21, 21′ (two first electronic componentsare shown in an embodiment) are disposed on a carrying board 9. Aplurality of conductive bodies 22 are bonded onto and electricallyconnected to the first electronic component 21, 21′.

In an embodiment, the carrying board 9 is a board made of asemiconductor material, such as silicon or glass, and is sequentiallyapplied with a release layer 90, a metal layer 9 b such astitanium/copper, and an insulation layer 91 made of a dielectricmaterial or solder mask material, for example. The conductive pillars 23are disposed on the insulation layer 91.

In an embodiment, the conductive pillars 23 are made of metal, such ascopper, or solder tin. In another embodiment, the conductive bodies 22are in the shape of a ball, such as a conductive circuit or a solderball, in the shape of a pillar, such as a metal material of a copperpillar and a solder tin bump, or in the shape of a stud, such asconductive element manufactured by a wire bonder.

In an embodiment, the first electronic component 21, 21′ is an activeelement, such as a semiconductor chip, a passive element, such as aresistor, a capacitor and an inductor, or a combination thereof. In anembodiment, the first electronic component 21, 21′ is a semiconductorchip, and has an active surface 21 a and an inactive surface 21 bopposing the active surface 21 a. The inactive surface 21 b of the firstelectronic component 21, 21′ is adhered via a bonding layer 212 onto theinsulation layer 91. The active surface 21 a has a plurality ofelectrode pads 210 and a protection film 211 made of a passivationmaterial, and the conductive bodies 22 are disposed in the protectionfilm 211.

In an embodiment, the first electronic component 21, 21′ is a driver ora trans impedance amplifier (TIA) that provides needed functions, suchas driving a laser diode or converting an analog signal to a digitalsignal to increase a signal-to-noise ratio (S/N). In an embodiment, asemiconductor material, such as silicon dioxide (SiO₂), is used tofabricate a needed wafer material, and an 8-inch wafer fabricationprocess is performed in a 130 nm scale, to fabricate the driver or theTIA. In an embodiment, the first electronic component 21 acts as theTIA, and the first electronic component 21′ acts as the driver. The TIA(the first electronic component 21) and a limiting amplifier process andconvert an optical current converted by an optical sensor into a voltagesignal that has a smaller amplitude than the optical current, and acomparator circuit at a rear end converts the voltage signal into adigital signal.

As shown in FIG. 2B, an encapsulation layer 25 is formed on theinsulation layer 91 of the carrying board 9 and encapsulates the firstelectronic component 21, 21′, the conductive bodies 22 and theconductive pillars 23. The encapsulation layer 25 has a first surface 25a and a second surface 25 b opposing the first surface 25 a. Theprotection film 211, end surfaces 22 a of the conductive bodies 22, andend surfaces 23 a of the conductive pillars 23 are exposed from thefirst surface 25 a of the encapsulation layer 25. The second surface 25b of the encapsulation layer 25 is bonded onto the insulation layer 91of the carrying board 9.

In an embodiment, the encapsulation layer 25 is made of an insulationmaterial, such as polyimide (PI), a dry film, an encapsulation resin,such as epoxy, or a molding compound. In another embodiment, theencapsulation layer 25 is formed on the insulation layer 91 by liquidcompound, injection, lamination or compression molding.

In an embodiment, a leveling process is performed, allowing the firstsurface 25 a of the encapsulation layer 25 to be flush with theprotection film 211, the end surfaces 23 a of the conductive pillars 23,and the end surfaces 22 a of the conductive bodies 22, and to allow theend surfaces 23 a of the conductive pillars 23 and the end surface 22 aof the conductive bodies 22 to be exposed from the first surface 25 a ofthe encapsulation layer 25. In another embodiment, the leveling processis performed by grinding and removing a portion of the protection film211, a portion of the conductive pillars 23, a portion of the conductivebodies 22, and a portion of the encapsulation layer 25.

The other end surfaces 23 b of the conductive pillars 23 are flush withthe second surface 25 b of the encapsulation layer 25.

As shown in FIG. 2C, a circuit structure 20 is disposed on the firstsurface 25 a of the encapsulation layer 25, and electrically connectedto the conductive pillars 23 and the conductive bodies 22.

In an embodiment, the circuit structure 20 comprises a plurality ofinsulation layers 200 and a plurality of redistribution layers (RDLs)201 formed on the insulation layers 200, with the outermost one of theinsulation layers 200 acting as a solder mask layer, and the outermostone of redistribution layers 201 exposed from the solder mask layer andacting as a conductive pad 202. In another embodiment, the circuitstructure 20 comprises a single insulation layer 200 and a singleredistribution layers 201.

In an embodiment, the redistribution layers 201 are made of copper. Inanother embodiment, the insulation layers 200 are made of a dielectricmaterial, such as polybenzoxazole (PBO), PI, prepreg (PP) etc., or asolder mask material, such as a solder mask or solder resist.

As shown in FIGS. 2D and 2D′, a singulation process is performed along acutting path S shown in FIG. 2C, to obtain a plurality of packagingunits 2 a. The encapsulation layer 25 further has a lateral surface 25 cadjoining the first surface 25 a and the second surface 25 b. At leastone laser component 28 and at least one optoelectronic component 26 aredisposed on the circuit structure 20 of the packaging units 2 a, and thelaser component 28 and/or the optoelectronic component 26 protrudes fromthe lateral surface 25 c of the encapsulation layer 25 to act as aconnection segment 280, 260.

In an embodiment, the laser component 28 is a device, such as a laserdiode, used for converting an electric signal into an optical signal, toemit an optical signal, such as a laser signal. The laser component 28emits laser according to a principle: light emitting source→lightsplitting→light collection→optical fiber connected externally, anddeploys the most critical data rate and watt. In an embodiment, thelaser component 28 provides vertical-cavity surface-emitting laser(VCSEL) or edge emitting laser. In another embodiment, a semiconductormaterial, such as InP, GaAs, SiGe, a fin field-effect transistor(FinFET) or a combination thereof is used for fabricating a wafersubstrate, and a 4-, 6- or 12-inch wafer process is performed in 130 nmor 65 nm scale, to fabricate the laser diode.

In an embodiment, the optoelectronic component 26 is a device, such asan optical diode, for converting an optical signal into an electricsignal to detect an optical signal. In another embodiment, theoptoelectronic component 26 can be fabricated into a optoelectronicdiode by fabricating a required wafer substrate with a semiconductormaterial, such as InP, GaAs, silicon-germanium (SiGe), or a combinationthereof, and performing a 4- or 6-inch wafer process in 130 nm scale tofabricate the optoelectronic diode.

In an embodiment, the laser component 28 and/or the optoelectroniccomponent 26 is electrically connected to the conductive pads 202 via aplurality of conductive bumps 27, such as solder bumps, copper bumpsetc. In an embodiment, under bump metallurgy (UBM) 270 is formed on theconductive pads 202, to be bonded to the conductive bumps 27.

An underfill 29 is formed between the circuit structure 20 and the lasercomponent 28 and/or the optoelectronic component 26 to encapsulate theconductive bumps 27.

As shown in FIG. 2E, the carrying board 9 and the release layer 90 andthe metal layer 9 b thereon are removed, with the insulation layer 91remained. A circuit portion 240 is formed on the insulation layer 91 andelectrically connected to the conductive pillars 23, to fabricate theelectronic package 2.

In an embodiment, laser is applied to the insulation layer 91 to form aplurality of holes, from which the end surfaces 23 b of the conductivepillars 23 and a portion of the second surface 25 b of the encapsulationlayer 25 are exposed, for the circuit portion 240 to be bonded thereto.In an embodiment, the circuit portion 240 is UBM, for a plurality ofconductive elements 24, such as solder bumps or solder balls, to bebonded thereto; alternatively, a circuit portion is formed on theinsulation layer 91 in an RDL process, for the conductive elements 24 orUBM to be bonded thereto. In another embodiment, the circuit layer 240can have various types.

In another embodiment, the carrying board 9 having the insulation layer91 is provided, for the insulation layer 91 to be used to form thecircuit portion 240 after the carrying board 9 is removed. Therefore, adielectric layer is not needed, and the fabrication time, steps and costcan be reduced.

During operation, the driver (the first electronic component 21′) drivesthe optoelectronic component 26, the connection segment 260 of theoptoelectronic component 26 receives and converts an optical signal ofan optical fiber cable (not shown) into an electric signal, the circuitstructure 20 and the TIA (the first electronic component 21) convert ananalog signal into a digital signal, the circuit structure 20 and thelaser component 28 convert the digital signal into an optical signal,and the connection segment 280 of the laser component 28 emits theoptical signal, such as a laser signal, to another optical fiber cable(not shown).

As shown in FIG. 3A, the conductive elements 24 are disposed on acarrying structure 30, to form another electronic package 3.

In an embodiment, the carrying structure 30 is in the form of asubstrate and has a top surface 30 a and a bottom surface 30 b opposingthe top surface 30 a, and the electronic package 2 is disposed on thetop surface 30 a of the carrying structure 30. In an embodiment, thecarrying structure 30 is a packaging substrate having a core layer and acircuit structure or a coreless circuit structure. In anotherembodiment, the circuit structure comprises at least one insulationlayer and at least one circuit layer (e.g., at least one fan outredistribution layer (RDL)) bonded to the insulation layer. In yetanother embodiment, the carrying structure 30 may be other boards, suchas a lead frame, a wafer, or other carrying boards having metalroutings.

In an embodiment, the conductive elements 24 are electrically connectedto the carrying structure 30, and an underfill 31 encapsulates theconductive elements 24.

As shown in FIG. 3B, a plurality of the laser components 28 and/or theoptoelectronic components 26 can be disposed on the top surface 30 a ofthe carrying structure 30 on demands, and a plurality of external pads300 can be disposed on the bottom surface 30 b of the carrying structure30.

In an embodiment, at least one second electronic component 32, a thirdelectronic component 33 and/or a heat sink 34 are disposed on thecarrying structure 30 based on functional demands.

The second electronic component 32 is disposed on the top surface 30 aof the carrying structure 30. In an embodiment, the second electroniccomponent 32 is an active element, such as a semiconductor chip, apassive element, such as a resistor, a capacitor and an inductor, or acombination thereof. In an embodiment, the second electronic component32 is a semiconductor chip and is disposed on a circuit layer of thecarrying structure 30 and electrically connected to the circuit layer ina flip-chip manner via a plurality of conductive bumps 320, such as asolder material, metal pillars or others, and the underfill 31encapsulates the conductive bumps 320. In another embodiment, the secondelectronic component 32 is electrically connected to the circuit layerof the carrying structure 30 in a wire bonding manner via a plurality ofbonding wires. In yet another embodiment, the second electroniccomponent 32 is in direct contact with the circuit layer of the carryingstructure 30. In still another embodiment, the second electroniccomponent 32 is electrically connected to the carrying structure 30 inother manners.

In an embodiment, based on functional demands, at least one set of clockand data recovery circuit (CDR) (e.g., two sets of CDRs shown in FIG.3B) is disposed on the second electronic component 32 corresponding tothe laser component 28 and the optoelectronic component 26, to provide aserial communication technique, such as SERializer/DESerializer(SERDES), to recover or dismantle signals having the same clocks and actas high frequency band transmission contacts (I/O). In an embodiment, awafer substrate required is fabricated by a semiconductor material, suchas silicon dioxide (SiO₂), and an 8-inch wafer fabricating process isperformed in a 130 nm scale, to fabricate the second electroniccomponent 32 and its CDR.

For a high speed optical fiber communication system, signals areattenuated severely. In order to avoid that digital signals output froma receiver circuit become deformed and exceed specification, a CDR and aphase-locked loop (PLL) will also be added to a rear stage of thereceiver circuit to properly process and then output signals.

The third electronic component 33 is disposed on the bottom surface 30 bof the carrying structure 30. In an embodiment, the third electroniccomponent 33 is an active element, such as a semiconductor chip, apassive element, such as a resistor, a capacitor and an inductor, apackaging structure, or a combination thereof. In an embodiment, thethird electronic component 33 is a semiconductor chip and is disposed onthe circuit layer of the carrying structure 30 and electricallyconnected to the circuit layer in a flip-chip manner via a plurality ofconductive bumps 330, such as a solder material, metal pillars orothers, and the underfill 31 encapsulates the conductive bumps 330. Inanother embodiment, the third electronic component 33 is electricallyconnected to the circuit layer of the carrying structure 30 in a wirebonding manner via a plurality of bonding wires. In yet anotherembodiment, the third electronic component 33 in in direct contact withthe circuit layer of the carrying structure 30. In still anotherembodiment, the third electronic component 33 is electrically connectedto the carrying structure 30 in other manners.

Based on functional demands, the third electronic component 33 isprovided with a power management IC for managing power of a main system.

The heat sink 34 is bonded via a heat dissipating layer 35 onto thelaser component 28, the optoelectronic component 26 and the secondelectronic component 32. In an embodiment, the heat dissipating layer 35is made of a thermal interface material (TIM), such as a highlythermally conductive resin material. In an embodiment, the heat sink 34has a heat dissipating body 340 and at least one supporting leg 341disposed below the heat dissipating body 340. In another embodiment, theheat dissipating body 340 is a heat dissipating plate having a lowerside in contact with the heat dissipating layer 35, and the supportingleg 341 is bonded via an adhesion layer 36 to the top surface 30 a ofthe carrying structure 30.

In the method for fabricating an electronic package according to thepresent disclosure, a Si bridge (i.e., the first electronic components21 and 21′ acting as the TIA and the driver, respectively) allows anembedded chip to be bridged to a homogeneous chip, to reduce theelectric loss of signal transmission. The conductive pillars 23, whichsurround the first electronic component 21, 21′, provide a high currentand a shielding effect.

The laser component 28 and the optoelectronic component 26 arefabricated separately, which reduces the fabrication difficulty andincreases the yield rate.

Under long-term operation, the laser component 28, which emits lasersignals, may be damaged due to high heat. As the laser component 28 isdamaged, it is the damaged laser component 28 that is to be replaced,and the whole electronic package 2, 3, including the well-functioningoptoelectronic component 26, can remain without being discarded.Compared with the prior art, the electronic package according to thepresent disclosure does not waste materials, and can reduce thereplacement cost at a user end.

As shown in FIG. 4, at least one electronic package 3 shown in FIG. 3Acan be disposed on a main board 40, to form an electronic packagingmodule 4.

In an embodiment, the main board 40 is a circuit board, and has a firstside 40 a and a second side 40 b opposing the first side 40 a. In anembodiment, the main board 40 is provided with a fan out circuit, theexternal pads 300 of the electronic package 3 are disposed on the firstside 40 a of the main board 40 via a plurality of conductive elements 41and electrically connected to the circuit of the main board 40, anunderfill 43 encapsulates the conductive elements 41 and the thirdelectronic component 33, and the second side 40 b of the main board 40is bonded to a plurality of conductive elements 42, such as a pluralityof solder bumps or solder balls, for a circuit board (not shown) to bemounted thereon.

Based on functional demands, at least one fourth electronic component 44can be disposed on the main board 40.

The fourth electronic component 44 is disposed on the first side 40 a ofthe main board 40. In an embodiment, the fourth electronic component 44is an active element, such as a semiconductor chip, a passive element,such as a resistor, a capacitor and an inductor, a packaging structure,or a combination thereof. In an embodiment, the fourth electroniccomponent 44 is a packaging structure, disposed on the circuit of themain board 40 in a flip-chip manner via a plurality of conductive bumps440, such as a solder material, metal pillars or others and electricallyconnected to the circuit, and the underfill 43 encapsulates theconductive bumps 440. In another embodiment, the fourth electroniccomponent 44 is electrically connected to the circuit of the main board40 in a wire bonding manner via a plurality of bonding wires. In yetanother embodiment, the fourth electronic component 44 is in directcontact with the circuit of the main board 40. In still anotherembodiment, the fourth electronic component 44 is electrically connectedto the main board 40 in other manners.

The present disclosure also provides an electronic package 2, 3, whichcomprises: an encapsulation layer 25, a plurality of first electroniccomponents 21 and 21′, a plurality of conductive pillars 23, a circuitstructure 20, at least one laser component 28 and at least oneoptoelectronic component 26.

The encapsulation layer 25 has a first surface 25 a, a second surface 25b opposing the first surface 25 a, and a lateral surface 25 c adjoiningthe first and second surfaces 25 a and 25 b.

The first electronic components 21 and 21′ are embedded in theencapsulation layer 25, and a plurality of conductive bodies 22 arebonded and electrically connected to the first electronic components 21and 21′. The conductive bodies 22 are embedded in the encapsulationlayer 25. The end surfaces 22 a of the conductive bodies 22 are exposedfrom the first surface 25 a of the encapsulation layer 25.

The conductive pillars 23 are embedded in the encapsulation layer 25,and the end surfaces 22 a of the conductive pillars 23 are exposed fromthe first surface 25 a of the encapsulation layer 25.

The circuit structure 20 is disposed on the first surface 25 a of theencapsulation layer 25 and electrically connected to the conductivepillars 23 and the conductive bodies 22.

The laser component 28 is disposed on and electrically connected to thecircuit structure 20.

The optoelectronic component 26 is disposed on and electricallyconnected to the circuit structure 20. The laser component 28 and theoptoelectronic component 26 are separated from each other and disposedon the circuit structure 20.

In an embodiment, the plurality of conductive pillars 23 surround thefirst electronic component 21, 21′.

In an embodiment, the laser component 28 protrudes from the lateralsurface 25 c of the encapsulation layer 25.

In an embodiment, the optoelectronic component 26 protrudes from thelateral surface 25 c of the encapsulation layer 25.

In an embodiment, the electronic package 2, 3 further comprises acircuit portion 240 disposed on the second surface 25 b of theencapsulation layer 25 and electrically connected to the conductivepillars 23. In another embodiment, the electronic package 2, 3 furthercomprises a plurality of conductive elements 24 disposed on the circuitportion 240.

In an embodiment, the electronic package 3 further comprises a carryingstructure 30 disposed on the second surface 25 b of the encapsulationlayer 25. In another embodiment, the electronic package 3 furthercomprises at least one second electronic component 32 disposed on thecarrying structure 30.

In the electronic package and the method for fabricating the sameaccording to the present disclosure, the first electronic components actas the TIA and driver, respectively, allowing an embedded chip to bebridged to a homogeneous chip, to reduce the electric loss of signaltransmission. The conductive pillars provide a high current and ashielding effect.

The laser component and the optoelectronic component are fabricatedseparately, which reduces the fabrication difficulty and increases theyield rate.

As the laser component is damaged, it is the damaged laser componentthat is to be replaced, and the whole electronic package, including thewell-functioning optoelectronic component, can remain without beingdiscarded. Compared with the prior art, the electronic package accordingto the present disclosure will not waste materials and can reduce thereplacement cost at the user end.

The foregoing descriptions of the detailed embodiments are onlyillustrated to disclose the features and functions of the presentdisclosure and not restrictive of the scope of the present disclosure.It should be understood to those in the art that all modifications andvariations according to the spirit and principle in the disclosure ofthe present disclosure should fall within the scope of the appendedclaims.

What is claimed is:
 1. An electronic package, comprising: anencapsulation layer having a first surface, a second surface opposingthe first surface, and a lateral surface adjoining the first surface andthe second surface; a first electronic component embedded in theencapsulation layer; a plurality of conductive pillars embedded in theencapsulation layer; a circuit structure formed on the first surface ofthe encapsulation layer and electrically connected to the conductivepillars and the first electronic component; a laser component disposedon the circuit structure and electrically connected to the circuitstructure; and an optoelectronic component disposed on the circuitstructure and electrically connected to the circuit structure, whereinthe laser component and the optoelectronic component are separated fromeach other, and wherein at least one of the laser component and theoptoelectronic component protrudes from the lateral surface of theencapsulation layer.
 2. The electronic package of claim 1, wherein theplurality of conductive pillars surround the first electronic component.3. The electronic package of claim 1, further comprising a plurality ofconductive bodies bonded and electrically connected to the firstelectronic component.
 4. The electronic package of claim 3, wherein theconductive bodies are embedded in the encapsulation layer andelectrically connected to the circuit structure.
 5. The electronicpackage of claim 1, further comprising a circuit portion disposed on thesecond surface of the encapsulation layer and electrically connected tothe conductive pillars.
 6. The electronic package of claim 5, furthercomprising a plurality of conductive elements disposed on the circuitportion.
 7. An electronic packaging module, comprising: a main board;and the electronic package of claim 1 disposed on the main board.
 8. Theelectronic packaging module of claim 7, further comprising at least onefourth electronic component disposed on the main board.
 9. Theelectronic package of claim 1, further comprising a carrying structuredisposed on the second surface of the encapsulation layer.
 10. Theelectronic package of claim 9, further comprising at least one of asecond electronic component and a heat sink disposed on the carryingstructure.
 11. The electronic package of claim 10, further comprising athird electronic component disposed on the carrying structure.
 12. Theelectronic package of claim 10, further comprising a heat dissipatinglayer, wherein the heat sink is bonded via the heat dissipating layer toat least one of the laser component and the optoelectronic component.13. A method for fabricating an electronic package, comprising:disposing a plurality of conductive pillars and at least one firstelectronic component on a carrying board; forming on the carrying boardan encapsulation layer encapsulating the first electronic component andthe conductive pillars, the encapsulation layer having a first surface,a second surface opposing the first surface and bonded to the carryingboard, with end surfaces of the conductive pillars exposed from thefirst surface of the encapsulation layer; disposing a circuit structureon the first surface of the encapsulation layer and electricallyconnecting the circuit structure to the conductive pillars and the firstelectronic component, wherein the encapsulation layer has a lateralsurface adjoining the first surface and the second surface; disposing alaser component and an optoelectronic component on the circuit structureand electrically connecting the laser component and the optoelectroniccomponent to the circuit structure, wherein the laser component and theoptoelectronic component are separated from each other, and wherein atleast one of the laser component and the optoelectronic componentprotrudes from the lateral surface of the encapsulation layer; andremoving the carrying board.
 14. The method of claim 13, wherein theplurality of conductive pillars surround the first electronic component.15. The method of claim 13, further comprising providing a plurality ofconductive bodies and bonding and electrically connecting the conductivebodies to the first electronic component.
 16. The method of claim 15,wherein the conductive bodies are embedded in the encapsulation layerand electrically connected to the circuit structure.
 17. The method ofclaim 13, further comprising disposing a circuit portion on the secondsurface of the encapsulation layer and electrically connecting thecircuit portion to the conductive pillars.
 18. The method of claim 17,further comprising disposing a plurality of conductive elements on thecircuit portion.
 19. The method of claim 13, further comprisingdisposing a carrying structure on the second surface of theencapsulation layer.
 20. The method of claim 19, further comprisingdisposing a second electronic component on the carrying structure.